vbus054b-hs3 document number 81586 rev. 1.4, 07-oct-08 vishay semiconductors www.vishay.com 1 20397 6 4 5 1 2 3 19957 1 for technical support, please contact: esd-protection@vishay.com 4-line bus-port esd-protection features ? ultra compact llp75-6a package ? 4-line usb esd-protection ? low leakage current ? low load capacitance c d = 0.8 pf ? esd-protection to iec 61000-4-2 15 kv contact discharge 15 kv air discharge ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec marking (example only) dot = pin 1 marking xx = date code yy = type code (see table below) ordering information package data absolute maximum ratings * please see document ?vishay green and halogen-free definitions (5-2008)? http://www.vishay.com/doc?99902 21001 xx yy device name ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity vbus054b-hs3 vbus054b-hs3-gs08 3000 15 000 device name package name marking code weight molding compound flammability rating moisture sensitivity level soldering conditions vbus054b-hs3 llp75-6a u6 5.1 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals rating test conditions symbol value unit peak pulse current pin 1, 3, 4 or 6 to pin 2 acc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 3a pin 5 to pin 2 acc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 10 a peak pulse power pin 1, 3, 4 or 6 to pin 2 acc. iec 61000-4-5; t p = 8/20 s; single shot p pp 45 w pin 5 to pin 2 acc. iec 61000-4-5; t p = 8/20 s; single shot p pp 200 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 15 kv air discharge acc. ie c 61000-4-2; 10 pulses v esd 15 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c
www.vishay.com 2 document number 81586 rev. 1.4, 07-oct-08 vbus054b-hs3 vishay semiconductors for technical support, please c ontact: esd-protection@vishay.com electrical characteristics ratings at 25 c, ambient temperature unless otherwise specified vbus054b-hs3 parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of line wh ich can be protected n lines 4 lines reverse stand-off voltage at i r = 0.1 a pin 1, 3, 4 or 6 to pin 2 v rwm 5v reverse current at v in = v rwm = 5 v pin 1, 3, 4 or 6 to pin 2 i r < 0.01 0.1 a reverse breakdown voltage at i r = 1 ma pin 5 to pin 2 v br 6.3 7.1 8 v at i r = 1 ma pin 1, 3, 4 or 6 to pin 2 v br 6.9 7.9 8.7 v reverse clamping voltage at i pp = 3 a; pin 1, 3, 4 or 6 to pin 2; acc. iec 61000-4-5 v c 15 v forward clamping voltage at i f = 3 a; pin 2 to pin 1, 3, 4 or 6; acc. iec 61000-4-5 v f 5v capacitance pin 1, 3, 4 or 6 to pin 2 v in (at pin 1, 3, 4 or 6) = 0 v and v bus (at pin 5) = 5 v; f = 1 mhz c d 0.8 1 pf pin 1, 3, 4 or 6 to pin 2 v in (at pin 1, 3, 4 or 6) = 2.5 v and v bus (at pin 5) = 5 v; f = 1 mhz c d 0.5 0.8 pf line symmetry difference of the line capacitances dc d 0.05 pf supply line capacitance pin 5 to pin 2 at v r = 0 v; f = 1 mhz c zd 110 pf
vbus054b-hs3 document number 81586 rev. 1.4, 07-oct-08 vishay semiconductors www.vishay.com 3 for technical support, please contact: esd-protection@vishay.com typical characteristics t amb = 25 c, unless otherwise specified figure 1. 8/20 s peak pulse current wave form acc. iec 61000-4-5 figure 2. esd discharge current wave form acc. iec 61000-4-2 (330 /150 pf) figure 3. typical input capacitance c in at pin 1, 3, 4, or 6 vs. input voltage v in 0 % 20 % 40 % 60 % 8 0 % 100 % 010203040 time ( s) i ppm 20 s to 50 % 8 s to 100 % 2054 8 0 % 20 % 40 % 60 % 8 0 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 8 0 90 100 time (ns) discharge c u rrent i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 0123456 v i n ( v ) c i n (pf) f = 1 mhz; v bus (at pin 5) = 5 v pin 1, 3, 4 or 6 to pin 2 20549 figure 4. typical forward current i f vs. forward voltage v f figure 5. typical reverse voltage v r vs. reverse current i r figure 6. typical peak clamping voltage v c vs. peak pulse current i pp 0.001 0.01 0.1 1 10 100 0.5 0.6 0.7 0. 8 0.9 1 1.1 1.2 v f ( v ) i f (ma) pin 2 to pin 1, 3, 4 or 6 pin 2 to pin 5 20550 0 1 2 3 4 5 6 7 8 9 0.01 0.1 1 10 100 1000 10000 i r ( a) v r ( v ) pin 5 to pin 2 pin 1, 3, 4 or 6 to pin 2 20551 - 10 - 5 0 5 10 15 20 01234 i pp (a) v c ( v ) meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form) pin 1, 3, 4 or 6 to pin 2 pin 2 to pin 1, 3, 4 or 6 pin 5 to pin 2 pin 2 to pin 5 v 20552 c
www.vishay.com 4 document number 81586 rev. 1.4, 07-oct-08 vbus054b-hs3 vishay semiconductors for technical support, please c ontact: esd-protection@vishay.com application note: with the vbus054b-hs3 a double, high speed usb-port or up to 4 other high speed signal or data lines can be protected against transient voltage signals. negative transients will be clamped close below the ground level while positive transients will be clamped close above th e 5 v working range. an avalanche diode clamps the supply line (v bus at pin 5) to ground (pin 2). the high speed data lines, d 1+ , d 2+ , d 1- and d 2- , are connected to pin 1, 3, 4 and 6. as long as the signal voltage on the data lines is between the ground- and the v bus -level, the low capacitance pn-diodes offer a very high isolation to v bus , ground and to the other data lines. but as soon as any transient signal exceeds this working range, one of the pn-diodes starts working in the forward mode and clamps the transient to ground or to the avalanche breakthrough voltage level of the z-diode between pin 5 and pin 2. figure 7. typical clamping performance at + 8 kv contact discharge (acc. iec 61000-4-2) figure 8. typical clamping performance at - 8 kv contact discharge (acc. iec 61000-4-2) - 20 0 20 40 60 8 0 100 120 - 10 0 10 20 30 40 50 60 70 8 090 t (ns) v c-esd ( v ) acc. iec 61000-4-2 + 8 k v contact discharge pin 1, 3, 4, 6 to pin 2 20553 - 160 - 140 - 120 - 100 - 8 0 - 60 - 40 - 20 0 20 - 10 0 10 20 30 40 50 60 70 8 090 t (ns) v c-esd ( v ) acc. iec 61000-4-2 - 8 k v contact discharge pin 1, 3, 4 or 6 to pin 2 20554 figure 9. typical peak cl amping voltage at esd contact discharge (acc. iec 61000-4-2) figure 10. typical peak clamping voltage at esd contact discharge (acc. iec 61000-4-2) - 250 - 200 - 150 - 100 - 50 0 50 100 150 200 0 5 10 15 20 v esd (k v ) v c-esd ( v ) acc. iec 61000-4-2 contact discharge v c-esd pin 1, 3, 4 or 6 to pin 2 pin 2 to pin 1, 3, 4 or 6 20555 - 8 0 - 60 - 40 - 20 0 20 40 60 8 0 100 120 140 0 5 10 15 20 v esd (k v ) v c-esd ( v ) acc. iec 61000-4-2 contact discharge v c-esd pin 5 to pin 2 pin 2 to pin 5 20556 t w i n u s b - p o r t d 2+ v bus g n d r e c e i v e r ic d 2- d 1+ d 1- 20399 6 4 5 1 2 3
vbus054b-hs3 document number 81586 rev. 1.4, 07-oct-08 vishay semiconductors www.vishay.com 5 for technical support, please contact: esd-protection@vishay.com background knowledge: a zener- or avalanche diode is an ideal device for "cutting" or "clamping" voltage spikes or voltage transients down to low and uncritical voltage values. the breakthrough voltage can easily be adjusted by the chip- technology to any desired value within a wide range. up to about 6 v the "zener-effect" (tunnel-effect) is responsible for the breakthrough characteristic. above 6 v the so-called "avalanche-effect" is responsible. this is a more abrupt breakthrough phenomenon. because of the typical "z-shape" of the current-voltage-curve of such diodes, these diodes are generally called "z-diode" (= zener or avalanche diodes). an equally important parameter for a protection diode is the esd- and surge-power that allows the diode to short current in the pulse to ground without being destroyed. this requirement can be adjusted by the size of the silicon chip (crystal). the bigger the active area the higher the current that the diode can short to ground. but the active area is also responsible for the diode capacitance - the bigger the area the higher the capacitance. the dilemma is that a lot of applications require an effective protection against more then 8 kv esd while the capacitance must be lower then 5 pf! this is well out of the normal range of a z-diode. however, a protection diode with a low capacitance pn-diode (switching diode or junction diode) in series with a z-diode, can fulfil both requirements simultaneously: low capacitance and high esd- and/or surge immunity become possible! a small signal (v pp < 100 mv) just sees the low capacitance of the pn-diode, while the big capacitance of the z-diode in series remains "invisible". such a constellation with a z-diode and a small pn-diode (with low capacitance) in series (anti-serial) is a real unidirectional protection device. the clamping current can only flow in one direction (forward) in the pn-diode. the reverse path is blocked. another pn-diode "opens" the back path so that the protection device becomes bidirectional! because the clamping voltage levels in forward and reverse directions are different, such a protection device has a bi directional and as ymmetrical clamping behaviour ( bias ) just like a single z-diode. c d = 0.4 pf c tot d zd cz d = 110 pf 20400 20401 d zd i/o gnd 20404 d 1 zd d 2 i/o gnd
www.vishay.com 6 document number 81586 rev. 1.4, 07-oct-08 vbus054b-hs3 vishay semiconductors for technical support, please contact: esd-protection@vishay.com one mode of use is,? in the very first moment before any pulses have arrived, all three diodes are completely discharged (so the diode capacitances are empty of charge) the first signal pulse with an amplitude > 0.5 v will drive the upper pn-diode (d 1 ) in a forward direction and "sees" the empty capacitance of the z-diode (zd). depending on the duration of this pulse and the pause to the next one the z-diodes capacitance can be charged up so that the next pulse "sees" a lower capacitance. after some pulses the big z-diode could be completely charged up so that the following pulses just see the small capacitance of both pn-diodes. for some application this can work perfectly..... for others applications the capacitance must be the same all the time from the first till the last pulse. for these applications the appropriate mode of use is to connect the z-diode to the supply voltage. in this mode the z-diode is charged up immediately by the supply voltage and both pn-diodes are always used in reverse. this keeps their capacitance at a minimum. d 1 zd d 2 i/o gnd 20405 d 1 zd d 2 i/o gnd v bus 20406
vbus054b-hs3 document number 81586 rev. 1.4, 07-oct-08 vishay semiconductors www.vishay.com 7 for technical support, please contact: esd-protection@vishay.com package dimensions in millimeter s (inches): llp75-6a 1 8 05 8
legal disclaimer notice www.vishay.com vishay revision: 12-mar-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products no t expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale , including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding th e design or manufacture of the part. please contact authorized vishay personnel t o obtain written terms and conditions regardin g products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu.
|
